ST · FETs & Power MOSFETs · MPN STB200NF03T4
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| Gate Charge(Qg) | 140nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 300W |
| RDS(on) | 3.6mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.95nF |
30V 120A 4V 300W 3.6mΩ 1 N-channel D2PAK Single FETs, MOSFETs RoHS