ST · FETs & Power MOSFETs · MPN STB18NM80
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| Gate Charge(Qg) | 70nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 17A |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 190W |
| Reverse Transfer Capacitance (Crss@Vds) | 29pF |
| RDS(on) | 295mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.07nF |
800V 17A 5V 190W 295mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS