ST STB18NF25

ST · FETs & Power MOSFETs · MPN STB18NF25

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Specifications

Gate Charge(Qg)29.5nC@10V
Drain to Source Voltage250V
Output Capacitance(Coss)178pF
Current - Continuous Drain(Id)17A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)28pF
RDS(on)165mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1nF
TypeN-Channel

Technical details

250V 17A 4V 110W 165mΩ@10V 1 N-channel N-Channel TO-263-2 Single FETs, MOSFETs RoHS

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