ST · FETs & Power MOSFETs · MPN STB180N55F3
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| Drain to Source Voltage | 55V |
|---|---|
| Gate Charge(Qg) | 100nC@10V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 330W |
| RDS(on) | 3.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
55V 120A 4V 330W 3.5mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS