ST STB17N80K5

ST · FETs & Power MOSFETs · MPN STB17N80K5

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Specifications

Gate Charge(Qg)26nC@10V
Drain to Source Voltage800V
Current - Continuous Drain(Id)14A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation170W
Reverse Transfer Capacitance (Crss@Vds)420fF
RDS(on)290mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)866pF

Technical details

N-Channel 800V 14A 170W Surface Mount D2PAK

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