ST STB170NF04

ST · FETs & Power MOSFETs · MPN STB170NF04

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)170nC@10V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)430pF
RDS(on)5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9nF
TypeN-Channel

Technical details

40V 80A 4V 300W 5mΩ@10V 1 N-channel N-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS

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