ST STB16N90K5

ST · FETs & Power MOSFETs · MPN STB16N90K5

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Specifications

Drain to Source Voltage900V
Gate Charge(Qg)29.7nC@10V
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation190W
Reverse Transfer Capacitance (Crss@Vds)1.6pF
RDS(on)330mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.027nF
TypeN-Channel

Technical details

900V 15A 5V 190W 330mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS

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