ST · FETs & Power MOSFETs · MPN STB160N75F3
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| Gate Charge(Qg) | 85nC@37.5V |
|---|---|
| Drain to Source Voltage | 75V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 330W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | 3.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.75nF |
75V 120A 4V 330W 3.7mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS