ST STB15810

ST · FETs & Power MOSFETs · MPN STB15810

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage100V
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)67pF
RDS(on)3.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.115nF

Technical details

N-Channel 100V 110A 250W Surface Mount D2PAK

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