ST STB155N3LH6

ST · FETs & Power MOSFETs · MPN STB155N3LH6

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Specifications

Gate Charge(Qg)80nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)725pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)420pF
RDS(on)3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.8nF
TypeN-Channel

Technical details

30V 80A 2.5V 110W 3mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS

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