ST · FETs & Power MOSFETs · MPN STB150NF55T4
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| Gate Charge(Qg) | 190nC@10V |
|---|---|
| Drain to Source Voltage | 55V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 300W |
| RDS(on) | 6mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.4nF |
55V 4V 300W 6mΩ 1 N-channel D2PAK Single FETs, MOSFETs RoHS