ST STB14NM50N

ST · FETs & Power MOSFETs · MPN STB14NM50N

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Specifications

Gate Charge(Qg)27nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)60pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation6W
Reverse Transfer Capacitance (Crss@Vds)3pF
RDS(on)320mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)816pF
TypeN-Channel

Technical details

N-Channel 500V 12A 6W Surface Mount D2PAK

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