ST STB14NK60ZT4

ST · FETs & Power MOSFETs · MPN STB14NK60ZT4

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)75nC@10V
Output Capacitance(Coss)240pF
Current - Continuous Drain(Id)13.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation160W
Reverse Transfer Capacitance (Crss@Vds)57pF
RDS(on)500mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.22nF
TypeN-Channel

Technical details

N-Channel 600V 13.5A 160W Surface Mount D2PAK

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