ST STB140NF55T4

ST · FETs & Power MOSFETs · MPN STB140NF55T4

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Specifications

Gate Charge(Qg)142nC@10V
Drain to Source Voltage55V
Output Capacitance(Coss)1nF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)290pF
RDS(on)8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.3nF
TypeN-Channel

Technical details

N-Channel 55V 80A 300W Surface Mount D2PAK

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