ST STB13NK60ZT4

ST · FETs & Power MOSFETs · MPN STB13NK60ZT4

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)66nC@10V
Output Capacitance(Coss)210pF
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)48pF
RDS(on)550mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.03nF
TypeN-Channel

Technical details

600V 13A 4.5V 150W 550mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS

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