ST · FETs & Power MOSFETs · MPN STB13N80K5
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 190W |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| RDS(on) | 370mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 870pF |
800V 12A 4V 190W 370mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS