ST STB130N6F7

ST · FETs & Power MOSFETs · MPN STB130N6F7

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)42nC@10V
Output Capacitance(Coss)1.2nF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation160W
Reverse Transfer Capacitance (Crss@Vds)115pF
RDS(on)5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.6nF
TypeN-Channel

Technical details

N-Channel 60V 80A 160W Surface Mount D2PAK

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