ST · FETs & Power MOSFETs · MPN STB12NM50T4
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| Gate Charge(Qg) | 39nC@400V |
|---|---|
| Drain to Source Voltage | 550V |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -65℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 160W |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 350mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1nF |
N-Channel 550V 12A 160W Surface Mount D2PAK