ST · FETs & Power MOSFETs · MPN STB12NK80ZT4
No reviews yet — be the first to review ST STB12NK80ZT4.
| Gate Charge(Qg) | 87nC |
|---|---|
| Drain to Source Voltage | 800V |
| Output Capacitance(Coss) | 250pF |
| Current - Continuous Drain(Id) | 10.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 190W |
| Reverse Transfer Capacitance (Crss@Vds) | 53pF |
| RDS(on) | 750mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.62nF |
| Vgs | ±30V |
800V 10.5A 4.5V 190W 750mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS