ST · FETs & Power MOSFETs · MPN STB120N4F6
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 65nC@10V |
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 650pF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 110W |
| Reverse Transfer Capacitance (Crss@Vds) | 350pF |
| RDS(on) | 4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.85nF |
N-Channel 40V 80A 110W Surface Mount D2PAK