ST · FETs & Power MOSFETs · MPN STB11NM80T4
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| Gate Charge(Qg) | 43.6nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -65℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 150W |
| RDS(on) | 400mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.63nF |
| Type | N-Channel |
N-Channel 800V 11A 150W Surface Mount D2PAK