ST STB11NK50ZT4

ST · FETs & Power MOSFETs · MPN STB11NK50ZT4

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Specifications

Drain to Source Voltage500V
Gate Charge(Qg)68nC@10V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)42pF
RDS(on)520mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.39nF
TypeN-Channel

Technical details

N-Channel 500V 10A 125W Surface Mount D2PAK

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