ST · FETs & Power MOSFETs · MPN STB10NK60ZT4
No reviews yet — be the first to review ST STB10NK60ZT4.
| Gate Charge(Qg) | 25nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 90pF |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 115W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 750mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.37nF |
| Type | N-Channel |
600V 10A 4.5V 115W 750mΩ@10V 1 N-channel N-Channel TO-263-2 Single FETs, MOSFETs RoHS