ST STB10N95K5

ST · FETs & Power MOSFETs · MPN STB10N95K5

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Specifications

Drain to Source Voltage950V
Gate Charge(Qg)22nC@10V
Output Capacitance(Coss)50pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation130W
Reverse Transfer Capacitance (Crss@Vds)0.6pF
RDS(on)800mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)630pF
TypeN-Channel

Technical details

N-Channel 950V 8A 130W Surface Mount D2PAK

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