ST · FETs & Power MOSFETs · MPN STB10LN80K5
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| Gate Charge(Qg) | 15nC@640V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 110W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 630mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 427pF |
800V 8A 3V 110W 630mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS