ST STB100NF04T4

ST · FETs & Power MOSFETs · MPN STB100NF04T4

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Specifications

Gate Charge(Qg)150nC@32V
Drain to Source Voltage40V
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)160pF
RDS(on)4.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.1nF

Technical details

N-Channel 40V 120A 300W Surface Mount D2PAK

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