ST · FETs & Power MOSFETs · MPN STB100N6F7
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| Gate Charge(Qg) | 30nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 125W |
| RDS(on) | 5.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.98nF |
60V 100A 4V 125W 5.6mΩ@10V 1 N-channel TO-263-2 Single FETs, MOSFETs RoHS