ST SH68N65DM6AG

ST · FETs & Power MOSFETs · MPN SH68N65DM6AG

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Specifications

ConfigurationHalf-Bridge
Current - Continuous Drain(Id)64A
RDS(on)41mΩ@10V
Pd - Power Dissipation379W
Gate Threshold Voltage (Vgs(th))3.25V
Drain to Source Voltage650V
Reverse Transfer Capacitance (Crss@Vds)2.6pF
Input Capacitance(Ciss)5.9nF
Operating Temperature-

Technical details

64A 41mΩ@10V 379W 3.25V FET, MOSFET Arrays RoHS

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