ST · FETs & Power MOSFETs · MPN SH32N65DM6AG
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| Configuration | Half-Bridge |
|---|---|
| Current - Continuous Drain(Id) | 32A |
| Pd - Power Dissipation | 208W |
| RDS(on) | 89mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 3.25V |
| Drain to Source Voltage | 650V |
| Reverse Transfer Capacitance (Crss@Vds) | 0.3pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 2.211nF |
| Gate Charge(Qg) | 47nC@10V |
| Operating Temperature | -55℃~+150℃ |
650V 32A 208W Surface Mount SMD-9P