ST(Semtech) MMBT8050D(J3Y)

ST(Semtech) · Transistors (BJTs) · MPN MMBT8050D(J3Y)

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO25V
Emitter-Base Voltage VEBO6V
DC Current Gain160
Pd - Power Dissipation350mW
Number1 NPN
typeNPN
Current - Collector(Ic)600mA
Operating Temperature-
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 25V 600mA 100MHz 350mW Surface Mount SOT-23

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