ST · FETs & Power MOSFETs · MPN SCTWA90N65G2V-4
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| Gate Charge(Qg) | 157nC |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 294pF |
| Current - Continuous Drain(Id) | 119A |
| Operating Temperature - | -55℃~+200℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 565W |
| RDS(on) | 24mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 49pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.38nF |
| Type | N-Channel |
N-Channel 650V 119A 565W Through Hole HiP247-4