ST SCTWA40N120G2V-4

ST · FETs & Power MOSFETs · MPN SCTWA40N120G2V-4

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Specifications

Drain to Source Voltage1.2kV
Gate Charge(Qg)61nC
Output Capacitance(Coss)56pF
Current - Continuous Drain(Id)36A
Operating Temperature --55℃~+200℃
Gate Threshold Voltage (Vgs(th))2.45V
Pd - Power Dissipation277W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)100mΩ
Number1 N-channel
Input Capacitance(Ciss)1.233nF
TypeN-Channel

Technical details

1.2kV 36A 2.45V 277W 100mΩ 1 N-channel N-Channel HiP-247-4 Single FETs, MOSFETs RoHS

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