ST · FETs & Power MOSFETs · MPN SCTWA35N65G2V
No reviews yet — be the first to review ST SCTWA35N65G2V.
| Gate Charge(Qg) | 73nC |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 125pF |
| Current - Continuous Drain(Id) | 45A |
| Operating Temperature - | -55℃~+200℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 208W |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | 67mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.37nF |
| Type | N-Channel |
650V 45A 5V 208W 67mΩ 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS