ST SCTW70N120G2V

ST · FETs & Power MOSFETs · MPN SCTW70N120G2V

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Specifications

Gate Charge(Qg)150nC
Drain to Source Voltage1.2kV
Output Capacitance(Coss)176pF
Current - Continuous Drain(Id)91A
Operating Temperature --55℃~+200℃
Gate Threshold Voltage (Vgs(th))4.9V
Pd - Power Dissipation547W
RDS(on)30mΩ
Reverse Transfer Capacitance (Crss@Vds)28pF
Number1 N-channel
Input Capacitance(Ciss)3.54nF
TypeN-Channel

Technical details

N-Channel 1.2kV 91A 547W Through Hole TO-247-3

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