ST SCTW60N120G2

ST · FETs & Power MOSFETs · MPN SCTW60N120G2

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Specifications

Drain to Source Voltage1.2kV
Gate Charge(Qg)94nC
Output Capacitance(Coss)113pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+200℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation389W
RDS(on)52mΩ
Reverse Transfer Capacitance (Crss@Vds)20pF
Number1 N-channel
Input Capacitance(Ciss)1.969nF
TypeN-Channel

Technical details

1.2kV 60A 5V 389W 52mΩ 1 N-channel N-Channel HiP-247 Single FETs, MOSFETs RoHS

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