ST SCTW40N120G2VAG

ST · FETs & Power MOSFETs · MPN SCTW40N120G2VAG

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Specifications

Drain to Source Voltage1.2kV
Gate Charge(Qg)63nC
Output Capacitance(Coss)56pF
Current - Continuous Drain(Id)33A
Operating Temperature --55℃~+200℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation290W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)105mΩ
Number1 N-channel
Input Capacitance(Ciss)1.23nF
TypeN-Channel

Technical details

1.2kV 33A 5V 290W 105mΩ 1 N-channel N-Channel HiP-247 Single FETs, MOSFETs RoHS

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