ST SCTW35N65G2VAG

ST · FETs & Power MOSFETs · MPN SCTW35N65G2VAG

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Specifications

Gate Charge(Qg)73nC
Drain to Source Voltage650V
Output Capacitance(Coss)125pF
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+200℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation240W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)67mΩ
Number1 N-channel
Input Capacitance(Ciss)1.37nF
TypeN-Channel

Technical details

650V 45A 5V 240W 67mΩ 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS

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