ST SCTL90N65G2V

ST · FETs & Power MOSFETs · MPN SCTL90N65G2V

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Specifications

Gate Charge(Qg)157nC
Drain to Source Voltage650V
Output Capacitance(Coss)294pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation935W
RDS(on)24mΩ
Reverse Transfer Capacitance (Crss@Vds)49pF
Number1 N-channel
Input Capacitance(Ciss)3.38nF
TypeN-Channel

Technical details

N-Channel 650V 40A 935W Surface Mount PowerVDFN-8

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