ST SCTL35N65G2V

ST · FETs & Power MOSFETs · MPN SCTL35N65G2V

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Specifications

Gate Charge(Qg)73nC
Drain to Source Voltage650V
Output Capacitance(Coss)125pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation417W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)67mΩ
Number1 N-channel
Input Capacitance(Ciss)1.37nF
TypeN-Channel

Technical details

N-Channel 650V 40A 417W Surface Mount VDFN-8-Power

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