ST SCT50N120

ST · FETs & Power MOSFETs · MPN SCT50N120

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Specifications

Gate Charge(Qg)122nC
Drain to Source Voltage1.2kV
Output Capacitance(Coss)170pF
Current - Continuous Drain(Id)65A
Operating Temperature --55℃~+200℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation318W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)69mΩ
Number1 N-channel
Input Capacitance(Ciss)1.9nF
TypeN-Channel

Technical details

1.2kV 65A 3V 318W 69mΩ 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS

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