ST SCT20N120H

ST · FETs & Power MOSFETs · MPN SCT20N120H

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Specifications

Gate Charge(Qg)45nC
Drain to Source Voltage1.2kV
Output Capacitance(Coss)65pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+175℃
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)14pF
RDS(on)239mΩ
Number1 N-channel
Input Capacitance(Ciss)650pF
TypeN-Channel

Technical details

1.2kV 20A 150W 239mΩ 1 N-channel N-Channel H2PAK-2 Single FETs, MOSFETs RoHS

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