ST SCT10N120

ST · FETs & Power MOSFETs · MPN SCT10N120

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Specifications

Gate Charge(Qg)22nC
Drain to Source Voltage1.2kV
Output Capacitance(Coss)30pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+200℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)9pF
RDS(on)690mΩ
Number1 N-channel
Input Capacitance(Ciss)290pF
TypeN-Channel

Technical details

1.2kV 12A 3.5V 150W 690mΩ 1 N-channel N-Channel HiP-247 Single FETs, MOSFETs RoHS

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