ST SCT1000N170

ST · FETs & Power MOSFETs · MPN SCT1000N170

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Specifications

Gate Charge(Qg)13.3nC
Drain to Source Voltage1.7kV
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+200℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation96W
RDS(on)1.3Ω
Reverse Transfer Capacitance (Crss@Vds)3.4pF
Number1 N-channel
Input Capacitance(Ciss)133pF
TypeN-Channel

Technical details

1.7kV 7A 3.5V 96W 1.3Ω 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS

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