ST SCT070W120G3AG

ST · FETs & Power MOSFETs · MPN SCT070W120G3AG

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Specifications

Output Capacitance(Coss)40pF
Pd - Power Dissipation236W
Configuration-
Drain to Source Voltage1.2kV
Gate Charge(Qg)41nC
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+200℃
Gate Threshold Voltage (Vgs(th))3V
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)63mΩ@18V
Number1 N-channel
Input Capacitance(Ciss)900pF

Technical details

236W 1.2kV 3V 63mΩ@18V 1 N-channel N-Channel HiP247-3 Single FETs, MOSFETs RoHS

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