ST SCT070H120G3AG

ST · FETs & Power MOSFETs · MPN SCT070H120G3AG

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Specifications

Output Capacitance(Coss)40pF
Pd - Power Dissipation223W
Configuration-
Gate Charge(Qg)37nC
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)63mΩ@18V
Number1 N-channel
Input Capacitance(Ciss)900pF

Technical details

223W 1.2kV 30A 3V 63mΩ@18V 1 N-channel N-Channel H2PAK-7 Single FETs, MOSFETs RoHS

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