ST SCT055W65G3-4AG

ST · FETs & Power MOSFETs · MPN SCT055W65G3-4AG

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Specifications

Gate Charge(Qg)32nC
Drain to Source Voltage650V
Current - Continuous Drain(Id)30A
Output Capacitance(Coss)73pF
Operating Temperature --55℃~+200℃
Gate Threshold Voltage (Vgs(th))4.2V
Pd - Power Dissipation210W
RDS(on)72mΩ
Reverse Transfer Capacitance (Crss@Vds)11pF
Number1 N-channel
Input Capacitance(Ciss)721pF
TypeN-Channel

Technical details

650V 30A 210W Through Hole HiP247-4

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