ST SCT040W120G3AG

ST · FETs & Power MOSFETs · MPN SCT040W120G3AG

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Specifications

Gate Charge(Qg)56nC
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)40A
Output Capacitance(Coss)78pF
Operating Temperature --55℃~+200℃
Gate Threshold Voltage (Vgs(th))4.2V
Pd - Power Dissipation312W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)40mΩ
Number1 N-channel
Input Capacitance(Ciss)1.329nF
TypeN-Channel

Technical details

1.2kV 40A 312W Through Hole HIP-247

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