ST SCT040TO65G3

ST · FETs & Power MOSFETs · MPN SCT040TO65G3

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Specifications

Gate Charge(Qg)42.5nC
Drain to Source Voltage650V
Current - Continuous Drain(Id)35A
Output Capacitance(Coss)89pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.2V
Pd - Power Dissipation288W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)63mΩ
Number1 N-channel
Input Capacitance(Ciss)853pF
TypeN-Channel

Technical details

650V 35A 4.2V 288W 63mΩ 1 N-channel N-Channel TOLL-8 Single FETs, MOSFETs RoHS

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