ST SCT040HU65G3AG

ST · FETs & Power MOSFETs · MPN SCT040HU65G3AG

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Specifications

Gate Charge(Qg)39.5nC
Drain to Source Voltage650V
Output Capacitance(Coss)94pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.2V
Pd - Power Dissipation221W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)55mΩ
Number1 N-channel
Input Capacitance(Ciss)920pF
TypeN-Channel

Technical details

650V 30A 4.2V 221W 55mΩ 1 N-channel N-Channel HU3PAK Single FETs, MOSFETs RoHS

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