ST SCT040H65G3AG

ST · FETs & Power MOSFETs · MPN SCT040H65G3AG

No reviews yet — be the first to review ST SCT040H65G3AG.

Specifications

Gate Charge(Qg)39.5nC
Drain to Source Voltage650V
Output Capacitance(Coss)94pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.2V
Pd - Power Dissipation221W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)55mΩ
Number1 N-channel
Input Capacitance(Ciss)920pF
TypeN-Channel

Technical details

N-Channel 650V 30A 221W Surface Mount H2PAK-7

Related FETs & Power MOSFETs